Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates
Description
Toolbox-ID
jz000077-0199
Identifier(s)
https://tustorage.ulb.tu-darmstadt.de/handle/tustorage/10194
Publisher
MDPI AG
License
https://creativecommons.org/licenses/by/4.0/
Subject(s)
DDC(s)
540