Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates
| datacite.relatedItem.firstPage | 207 | |
| datacite.relatedItem.issue | 8 | |
| datacite.relatedItem.relatedIdentifierType | ISSN | |
| datacite.relatedItem.relatedItemIdentifier | 2304-6740 | |
| datacite.relatedItem.relationType | IsPublishedIn | |
| datacite.relatedItem.title | Inorganics | |
| datacite.relatedItem.volume | 12 | |
| dc.contributor.author | Yujie Yan | |
| dc.contributor.author | Jun Huang | |
| dc.contributor.author | Lei Pan | |
| dc.contributor.author | Biao Meng | |
| dc.contributor.author | Qiangmin Wei | |
| dc.contributor.author | Bing Yang | |
| dc.date.accessioned | 2024-09-13T09:51:58Z | |
| dc.date.available | 2024-09-13T09:51:58Z | |
| dc.date.issued | 2024 | |
| dc.identifier.doi | https://doi.org/10.3390/inorganics12080207 | |
| dc.identifier.other | jz000077-0199 | |
| dc.identifier.uri | https://tustorage.ulb.tu-darmstadt.de/handle/tustorage/10194 | |
| dc.publisher | MDPI AG | |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
| dc.subject.ddc | 540 | |
| dc.title | Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates | |
| dc.type | Article | |
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