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Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics

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Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics
(MDPI AG, 2024) Jie Lu; Zeyang Xiang; Kexiang Wang; Mengrui Shi; Liuxuan Wu; Fuyu Yan; Ranping Li; Zixuan Wang; Huilin Jin; Ran Jiang

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