Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics

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dc.contributor.authorJie Lu
dc.contributor.authorZeyang Xiang
dc.contributor.authorKexiang Wang
dc.contributor.authorMengrui Shi
dc.contributor.authorLiuxuan Wu
dc.contributor.authorFuyu Yan
dc.contributor.authorRanping Li
dc.contributor.authorZixuan Wang
dc.contributor.authorHuilin Jin
dc.contributor.authorRan Jiang
dc.date.accessioned2024-08-15T14:06:50Z
dc.date.available2024-08-15T14:06:50Z
dc.identifier.urihttps://tustorage.ulb.tu-darmstadt.de/handle/tustorage/7231
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.ddc540
dc.titleBipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics
dc.typepdf
dspace.entity.typeDistribution
relation.isDatasetOfDistributione8c4a15f-b285-4e13-b33a-40b84b37d3eb
relation.isDatasetOfDistribution.latestForDiscoverye8c4a15f-b285-4e13-b33a-40b84b37d3eb

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