Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics

Description

Toolbox-ID

jz000077-0113

Identifier(s)

https://tustorage.ulb.tu-darmstadt.de/handle/tustorage/7230

Publisher

MDPI AG

License

https://creativecommons.org/licenses/by/4.0/

Subject(s)

DDC(s)

540

Distribution(s)

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Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics
Jie Lu; Zeyang Xiang; Kexiang Wang; Mengrui Shi; Liuxuan Wu; Fuyu Yan; Ranping Li; Zixuan Wang; Huilin Jin; Ran Jiang
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Distribution
Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics
Jie Lu; Zeyang Xiang; Kexiang Wang; Mengrui Shi; Liuxuan Wu; Fuyu Yan; Ranping Li; Zixuan Wang; Huilin Jin; Ran Jiang