Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics

Simple item page
datacite.relatedItem.firstPage60
datacite.relatedItem.issue2
datacite.relatedItem.relatedIdentifierTypeISSN
datacite.relatedItem.relatedItemIdentifier2304-6740
datacite.relatedItem.relationTypeIsPublishedIn
datacite.relatedItem.titleInorganics
datacite.relatedItem.volume12
dc.contributor.authorJie Lu
dc.contributor.authorZeyang Xiang
dc.contributor.authorKexiang Wang
dc.contributor.authorMengrui Shi
dc.contributor.authorLiuxuan Wu
dc.contributor.authorFuyu Yan
dc.contributor.authorRanping Li
dc.contributor.authorZixuan Wang
dc.contributor.authorHuilin Jin
dc.contributor.authorRan Jiang
dc.date.accessioned2024-08-15T14:06:49Z
dc.date.available2024-08-15T14:06:49Z
dc.date.issued2024
dc.identifier.doihttps://doi.org/10.3390/inorganics12020060
dc.identifier.otherjz000077-0113
dc.identifier.urihttps://tustorage.ulb.tu-darmstadt.de/handle/tustorage/7230
dc.publisherMDPI AG
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.ddc540
dc.titleBipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics
dc.typeArticle
dcat.distribution.pdfhttps://tustorage.ulb.tu-darmstadt.de/handle/tustorage/7231
dcat.distribution.supplierxmlhttps://tustorage.ulb.tu-darmstadt.de/handle/tustorage/7232
dspace.entity.typeDataset
relation.isDistributionOfDatasetbb05f100-eded-4757-aa5b-dadfc548e131
relation.isDistributionOfDatasetda089c77-c892-47ae-b4ca-a7c6ca33e17e
relation.isDistributionOfDatasetfefedb7d-f592-40e9-8af0-c534c7590aa4
relation.isDistributionOfDataset.latestForDiscoverybb05f100-eded-4757-aa5b-dadfc548e131
wdm.archivematicaaipuuid.original5f94376f-c2b1-4983-a387-556c36d8eb23

Files

Collections

2024