Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics

Jie LuZeyang XiangKexiang WangMengrui ShiLiuxuan WuFuyu YanRanping LiZixuan WangHuilin JinRan Jiang2024-08-152024-08-152024jz000077-0113https://tustorage.ulb.tu-darmstadt.de/handle/tustorage/7230540Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate DielectricsArticlehttps://doi.org/10.3390/inorganics12020060