Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates

Yujie YanJun HuangLei PanBiao MengQiangmin WeiBing Yang2024-09-132024-09-132024jz000077-0199https://tustorage.ulb.tu-darmstadt.de/handle/tustorage/10194540Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si SubstratesArticlehttps://doi.org/10.3390/inorganics12080207