Effect of Multiple Doping Elements on Polarity Switching of Polycrystalline SnSe Semiconductor

dc.contributor.authorFrantišek Mihok
dc.contributor.authorGabriela Hricková
dc.contributor.authorViktor Puchý
dc.contributor.authorJuraj Szabó
dc.contributor.authorBeáta Ballóková
dc.contributor.authorRóbert Džunda
dc.contributor.authorKarel Saksl
dc.date.accessioned2024-08-15T13:20:39Z
dc.date.available2024-08-15T13:20:39Z
dc.identifier.urihttps://tustorage.ulb.tu-darmstadt.de/handle/tustorage/5314
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.ddc540
dc.titleEffect of Multiple Doping Elements on Polarity Switching of Polycrystalline SnSe Semiconductor
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