Effect of Doping Different Cu Valence States in HfO2 on Resistive Switching Properties of RRAM

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dc.contributor.authorJin Yang
dc.contributor.authorJun Chen
dc.contributor.authorYingzheng Hong
dc.date.accessioned2024-08-15T14:40:22Z
dc.date.available2024-08-15T14:40:22Z
dc.identifier.urihttps://tustorage.ulb.tu-darmstadt.de/handle/tustorage/8628
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.ddc540
dc.titleEffect of Doping Different Cu Valence States in HfO2 on Resistive Switching Properties of RRAM
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relation.isDatasetOfDistribution.latestForDiscoverydf06bff8-6135-4654-98bd-019eefbe3e00

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