Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates

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dc.contributor.authorYujie Yan
dc.contributor.authorJun Huang
dc.contributor.authorLei Pan
dc.contributor.authorBiao Meng
dc.contributor.authorQiangmin Wei
dc.contributor.authorBing Yang
dc.date.accessioned2024-09-13T09:52:03Z
dc.date.available2024-09-13T09:52:03Z
dc.identifier.urihttps://tustorage.ulb.tu-darmstadt.de/handle/tustorage/10196
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.ddc540
dc.titleInvestigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates
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relation.isDatasetOfDistributionde948252-1ba9-455b-a207-f61d05308008
relation.isDatasetOfDistribution.latestForDiscoveryde948252-1ba9-455b-a207-f61d05308008

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