Effect of Multiple Doping Elements on Polarity Switching of Polycrystalline SnSe Semiconductor

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datacite.relatedItem.firstPage103
datacite.relatedItem.issue4
datacite.relatedItem.relatedIdentifierTypeISSN
datacite.relatedItem.relatedItemIdentifier2304-6740
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datacite.relatedItem.titleInorganics
datacite.relatedItem.volume12
dc.contributor.authorFrantišek Mihok
dc.contributor.authorGabriela Hricková
dc.contributor.authorViktor Puchý
dc.contributor.authorJuraj Szabó
dc.contributor.authorBeáta Ballóková
dc.contributor.authorRóbert Džunda
dc.contributor.authorKarel Saksl
dc.date.accessioned2024-08-15T13:20:38Z
dc.date.available2024-08-15T13:20:38Z
dc.date.issued2024
dc.identifier.doihttps://doi.org/10.3390/inorganics12040103
dc.identifier.otherjz000077-0034
dc.identifier.urihttps://tustorage.ulb.tu-darmstadt.de/handle/tustorage/5312
dc.publisherMDPI AG
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.ddc540
dc.titleEffect of Multiple Doping Elements on Polarity Switching of Polycrystalline SnSe Semiconductor
dc.typeArticle
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