Effect of Doping Different Cu Valence States in HfO2 on Resistive Switching Properties of RRAM
| datacite.relatedItem.firstPage | 85 | |
| datacite.relatedItem.issue | 6 | |
| datacite.relatedItem.relatedIdentifierType | ISSN | |
| datacite.relatedItem.relatedItemIdentifier | 2304-6740 | |
| datacite.relatedItem.relationType | IsPublishedIn | |
| datacite.relatedItem.title | Inorganics | |
| datacite.relatedItem.volume | 10 | |
| dc.contributor.author | Jin Yang | |
| dc.contributor.author | Jun Chen | |
| dc.contributor.author | Yingzheng Hong | |
| dc.date.accessioned | 2024-08-15T14:40:21Z | |
| dc.date.available | 2024-08-15T14:40:21Z | |
| dc.date.issued | 2022 | |
| dc.identifier.doi | https://doi.org/10.3390/inorganics10060085 | |
| dc.identifier.other | jz000075-0240 | |
| dc.identifier.uri | https://tustorage.ulb.tu-darmstadt.de/handle/tustorage/8626 | |
| dc.publisher | MDPI AG | |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
| dc.subject.ddc | 540 | |
| dc.title | Effect of Doping Different Cu Valence States in HfO2 on Resistive Switching Properties of RRAM | |
| dc.type | Article | |
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